Advanced Semiconductor and Organic Nano-Techniques by Hadis Morkoc

By Hadis Morkoc

  • Materials Scientists, Physicists, Engineers.

Content:
Preface for quantity I

, Pages xiii-xv, Hadis Morkoç
List of members for quantity I

, Page xvii
Preface for quantity II

, Pages ix-xiii, Hadis Morkoç
List of participants for quantity II

, Pages xv-xvi
Preface for quantity III

, Pages xi-xvii, Hadis Morkoç
List of participants for quantity III

, Pages xix-xx
Chapter 1 - rising Advances in Microelectronics, Optoelectronics and Bioelectronics

, Pages 1-145, H. Morkoç
Chapter 2 - The problem of constructing a Roadmap from Microelectronics to Nanoelectronics

, Pages 147-209, R. Doering
Chapter three - CMOS Scaling to Nanometer Lengths

, Pages 211-238, Y. Taur
Chapter four - Sub-20-nm Electron Devices

, Pages 239-302, okay. Likharev
Chapter five - functions of unmarried Electron Tunnelling

, Pages 303-324, J.P. Pekola
Chapter 6 - Silicon on Insulator: know-how and Devices

, Pages 325-365, S. Cristoloveanu, F. Balestra
Chapter 7 - Quantum Dot Lasers

, Pages 367-410, D.G. Deppe, H. Huang
Chapter eight - Nanotechnology and Magnetic Memories

, Pages 411-439, A.V. Pohm
Chapter nine - Quantum details technology from the viewpoint of a tool and fabrics Engineer

, Pages 441-502, S. Bandyopadhyay
Chapter 1 - Engineering the digital constitution and the Optical houses of Semiconductor Quantum Dots

, Pages 1-50, M. De Giorgi, R. Rinaldi, T. Johal, G. Pagliara, A. Passaseo, M. De Vittorio, M. Lomascolo, R. Cingolani, A. Vasanelli, R. Ferreira, G. Bastard
Chapter 2 - GaN-Based Modulation Doped FETs and Heterojunction Bipolar Transistors

, Pages 51-145, H. Morkoç
Chapter three - Ultraviolet Photodetectors in line with GaN and AlGaN

, Pages 147-190, H. Temkin
Chapter four - natural Field-Effect Transistors for Large-Area Electronics

, Pages 191-240, C.D. Dimitrakopoulos
Chapter five - natural Optoelectronics: The Case of Oligothiophenes

, Pages 241-291, G. Gigli, M. Anni, R. Cingolani, G. Barbarella
Chapter 6 - Single-Walled Carbon Nanotubes for Nanoelectronics

, Pages 293-343, M.S. Fuhrer
Chapter 7 - brief Wavelength III-Nitride Lasers

, Pages 345-405, A.V. Nurmikko
Chapter 1 - electric Conduction via Molecules

, Pages 1-41, F. Zahid, M. Paulsson, S. Datta
Chapter 2 - Molecular digital Devices

, Pages 43-187, J. Chen, M.A. Reed, S.M. Dirk, D.W. rate, A.M. Rawlett, J.M. travel, D.S. Grubisha, D.W. Bennett
Chapter three - Fabrication of Nanoscale constructions utilizing STM and AFM

, Pages 189-224, A.A. Baski
Chapter four - Optical Nanosensors for organic Applications—Spectroscopic recommendations on the mobile Level

, Pages 225-250, B.M. Cullum, T. Vo-Dinh
Chapter five - present matters and Advances in Dissociated telephone Culturing on Nano-and Microfabricated Substrates

, Pages 251-318, H.G. Craighead, C.D. James, A.M.P. Turner
Chapter 6 - electric Fields: Their Nature and impact on organic Systems

, Pages 319-346, R.J. Colello, J.K. Alexander
Chapter 7 - DNA Chips Come of Age

, Pages 347-370, G. Ramsay
Chapter eight - organic Computation: From DNA to Cells

, Pages 371-405, C.C. Maley
Chapter nine - mobile Manipulations

, Pages 407-482, C. González, S.D. Collins
Chapter 10 - Fluidics in Microchannels

, Pages 483-504, P.M.St. John, M. Deshpande
Chapter eleven - Hybrid organic Nanomachines

, Pages 505-540, J.J. Schmidt, C.D. Montemagno
Index for quantity I

, Pages 503-519
Index for quantity II

, Pages 407-421
Index for quantity III

, Pages 541-555

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Extra resources for Advanced Semiconductor and Organic Nano-Techniques

Sample text

In the recombination medium. To distinguish this from other types of LEDs, the name OLED for organic LED has been coined. For a review of recent developments, the reader is referred to a special issue of IEEE Transactions on Electron Devices (Dodabalapur and Kido 1997). These plastic LED materials are attractive in that they have applications in large area displays for back lighting, active matrix displays, and even stimulated emission. In hybrid applications, these polymers can be conveniently produced to complement nitride based blue LED pumps to produce the desired color including white light.

Informal results indicate that mobilities close to 300000cm^V~^ s~^ can be obtained which compares very well with about 30000cm^V~'s"^ attainable in Si/Si02 system. 5 |im gate length devices (Ismail 1995). 15 have been grown using UHV/CVD by Wang et al. (1989). 12 and a Si spacer of 60 A—for a sheet carrier concentration of-^8 x lO'^ cm"*^. The values of hole mobility is roughly an order of magnitude higher than the highest values reported in p-type Si inversion layers and are most probably limited by remote ionized impurity scattering from the heavily doped Si layer, and/or the interfacial quaHty at the Si/SiGe heterointerface.

The chromaticity diagram in which blue InGaN single quantum well LEDs, green InGaN single quantum well LEDs, green GaP LEDs, AlInGaP LEDs, and red GaAlAs LEDs are indicated is shown in Fig. 16. The outer perimeter in this diagram indicates saturated colors, in other words emission with negligible broadening. It is clearly evident that addition of nitride-based blue and green along with the previously available red LEDs has paved the way to obtain some 70% of the colors encompassed by the chromaticity diagram.

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